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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN 1 2 3 Base Emitter DESCRIPTION Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Fig.1 simplified outline (TO-3) and symbol CONDITIONS NCH I AGN SEM E Open emitter Open base Open collector UTO OND IC VALUE 250 200 7 40 50 8 R UNIT V V V A A A W ae ae Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 150 -65~200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 0.7 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current CONDITIONS IC=0.2A; IB=0;L=25mH IE=50mA; IC=0 IC=12 A;IB=1.2A IC=25 A;IB=3A IC=25A;IB=3A VCE=250V;VBE=-1.5V TC=125ae VCE=160V;IB=0 VEB=5V; IC=0 IC=12A ; VCE=2V IC=25A ; VCE=4V MIN 200 7 TYP. BUV21 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V V 0.6 1.5 1.5 3.0 12 3.0 1.0 V V V mA mA mA Emitter cut-off current DC current gain DC current gain Transition frequency Switching times ton ts tf Turn-on time Storage time Fall time HAG INC SEM NE IC=2A ; VCE=15V; f=4MHz UTO OND IC 20 10 8.0 R 60 MHz 1.0 IC=25A ;IB1=-IB2=3A VCC=100V ;RC=4| 1.8 0.4 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV21 HAG INC SEM NE UTO OND IC R Fig.2 Outline dimensions 3 |
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